AI computing power is surging, making power semiconductors a "rigid demand"

On June 22nd, Xinlian Power, a subsidiary of Xinlian Integrated Holding Company, officially announced the launch of a 3300V SiC MOSFET device. This product fills a crucial gap in the application of domestic high-voltage SiC devices in the core power stage of solid-state transformers, representing a significant breakthrough in the fields of AI infrastructure power supplies and high-voltage wide-bandgap semiconductors.

As the computing power demand for generative AI grows exponentially, the power density of a single AI cabinet is approaching the megawatt level. At the beginning of the year, NVIDIA announced the promotion of the power supply architecture of AI data centers to 800V HVDC, making solid-state transformers a key component in the field of AI data centers. In the fields of smart grids and new energy, solid-state transformers also play a core role. With the gradual growth of the solid-state transformer market, high-voltage SiC devices will face more definite mass production requirements.

It is understood that the 3300V SiC MOSFET device launched by Xinlian Power this time is deeply customized for high-voltage, high-power density, and high-reliability application scenarios such as solid-state transformers (SST). Samples have been sent to core customers for verification. Based on the comprehensive solution formed by the advantages of the 3300V device, the system-level BOM cost can be reduced by 20% - 35%, providing core device support for the evolution of solid-state transformers towards higher switching frequencies, smaller volumes, and higher conversion efficiencies.

The industry believes that the release of the 3300V SiC device this time fills a crucial gap in the application of domestic high-voltage SiC devices in the core power stage of solid-state transformers, representing a significant breakthrough in the field of high-voltage wide-bandgap semiconductors.

Xinlian Power focuses on one-stop system solutions for silicon carbide (SiC) and gallium nitride (GaN), mainly serving fields such as new energy vehicles, AI data center power supplies, energy, and industrial control. It has the first 8-inch silicon carbide MOSFET production line in China and is one of the few domestic enterprises that have achieved mass production of SiC chips for the main drive of new energy vehicles. Currently, it is mainly deploying SiC and GaN solutions for 800V HVDC in data centers and SST devices for the AIDC field.

According to the data for the first quarter of 2026 released by the third-party research platform NE Era, Xinlian Power ranks second in the installation volume of silicon carbide power modules in China, with a market share of 14.6%.